Project description
New quantum materials for future phonics and optoelectronics can be achieved by doping or layering 2D materials or silicon. Si photonics is a suite of technologies that allows for the miniaturization of photonic components on the integrated platform and is based on complementary metal-oxide-semiconductor (CMOS) electronics manufacturing. Two classes of quantum emitters will be investigated: group IV quantum dots (QDs) and 2D transition metal sulfides semiconductors (2D TMS). We will utilize ion beam implantation to fabricate quantum light emitters and explore the resulting electronic band structures using Scanning Tunnelling Microscopy (STM), Angle Resolved Photoelectron Spectroscopy (ARPES) and Momentum Microscopy (MM) in collaboration with Prof Lyudmilla Goncharova, Western University, Canada.
Co-supervisors
Prof Lyudmila Goncharova
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