Project descriptionHerbert Kroemer, Physics Nobel Laureate in 2000 is often quoted for his dictum ‘‘the interface is the device. Domain walls naturally form at the nanoscale interfaces of polar order leading to electronic properties distinct from the bulk that can also be electrically programmed – meaning that walls can be created, erased and displaced on demand. These nanoscale features currently are being actively explored for the development of agile, low-energy electronics for applications in memory, logic, and brain-inspired neuromorphic computing (Science Advances 3, e1700512, 2017). This project will focus on the investigation of domain microstructure and walls including their controlled electrical modification, and coupled electronic and nanomechanical properties in solution-processed, low-cost oxide thin films.
Assumed knowledgePhysics/Chemistry/Nanotechnology/Materials Science
Supervisors research focusELECTRONIC MATERIALS AND DEVICES, NANOSCIENCE, SCANNING PROBE MICROSCOPY & SPECTROSCOPY
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